A simple high-performance architecture for bulkdriven operational transconductance amplifiers (OTAs) is presented. The solution, suitable for operation under sub 1-V single supply, is made up of three gain stages and, as an additional feature, provides inherent class-AB behavior with accurate and robust standby current control. The OTA is fabricated in a 180-nm standard CMOS technology, occupies an area of 19.8 · 10−3 mm2 and is powered from 0.7 V with a standby current consumption of around 36 μA. DC gain and unity gain frequency are 57 dB and 3 MHz, respectively, under a capacitive load of 20 pF. Overall good large-signal and small-signal performances are achieved, making the solution extremely competitive in comparison to the state of the art

0.7-V Three-Stage Class-AB CMOS Operational Transconductance Amplifier

PENNISI, Salvatore;GRASSO, ALFIO DARIO;
2016

Abstract

A simple high-performance architecture for bulkdriven operational transconductance amplifiers (OTAs) is presented. The solution, suitable for operation under sub 1-V single supply, is made up of three gain stages and, as an additional feature, provides inherent class-AB behavior with accurate and robust standby current control. The OTA is fabricated in a 180-nm standard CMOS technology, occupies an area of 19.8 · 10−3 mm2 and is powered from 0.7 V with a standby current consumption of around 36 μA. DC gain and unity gain frequency are 57 dB and 3 MHz, respectively, under a capacitive load of 20 pF. Overall good large-signal and small-signal performances are achieved, making the solution extremely competitive in comparison to the state of the art
A simple high-performance architecture for bulkdriven operational transconductance amplifiers (OTAs) is presented. The solution, suitable for operation under sub 1-V single supply, is made up of three gain stages and, as an additional feature, provides inherent class-AB behavior with accurate and robust standby current control. The OTA is fabricated in a 180-nm standard CMOS technology, occupies an area of 19.8 · 10−3 mm2 and is powered from 0.7 V with a standby current consumption of around 36 μA. DC gain and unity gain frequency are 57 dB and 3 MHz, respectively, under a capacitive load of 20 pF. Overall good large-signal and small-signal performances are achieved, making the solution extremely competitive in comparison to the state of the art
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/19312
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