Mild heating of the Zn(C5F6HO2)22H2OCH3(OCH2CH2)2OCH3 precursor allowed MOCVD deposition of ZnO films, in a low-pressure horizontal hot-wall reactor, on ITO substrates. The ZnO films were subsequently implanted with Sb ions. XRD measurements provided evidence that they consist of hexagonal, (002) and (10l) oriented, crystals. UV-Vis spectra showed that the transmittance of these films in the visible region is about 90%. The Sb implanted ZnO film showed a current-voltage characteristic that resembles that of a rectifying diode. This study represents the first example of Sb-implantation in ZnO films obtained by MOCVD.
Sb-Implanted ZnO Ultra -Thin Films.
MALANDRINO, Graziella;PRIOLO, Francesco;GULINO, Antonino
2017-01-01
Abstract
Mild heating of the Zn(C5F6HO2)22H2OCH3(OCH2CH2)2OCH3 precursor allowed MOCVD deposition of ZnO films, in a low-pressure horizontal hot-wall reactor, on ITO substrates. The ZnO films were subsequently implanted with Sb ions. XRD measurements provided evidence that they consist of hexagonal, (002) and (10l) oriented, crystals. UV-Vis spectra showed that the transmittance of these films in the visible region is about 90%. The Sb implanted ZnO film showed a current-voltage characteristic that resembles that of a rectifying diode. This study represents the first example of Sb-implantation in ZnO films obtained by MOCVD.| File | Dimensione | Formato | |
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