A hydrodynamical model based on the maximum entropy principle is formulated for GaAs semiconductors. Explicit closure relations for the moment equations of the electron density, energy, velocity and energy-flux are obtained by using the Kane dispersion approximation for the description of the conduction bands. All the relevant scattering mechanisms are included: interaction of electrons with acoustic, polar and non-polar optical phonons, impurities. Application to the bulk case reveals that the model describes with accuracy the effect of negative differential conductivity, typical of GaAs, as well as the velocity overshoot and saturation.

Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle

ROMANO, Vittorio
2002

Abstract

A hydrodynamical model based on the maximum entropy principle is formulated for GaAs semiconductors. Explicit closure relations for the moment equations of the electron density, energy, velocity and energy-flux are obtained by using the Kane dispersion approximation for the description of the conduction bands. All the relevant scattering mechanisms are included: interaction of electrons with acoustic, polar and non-polar optical phonons, impurities. Application to the bulk case reveals that the model describes with accuracy the effect of negative differential conductivity, typical of GaAs, as well as the velocity overshoot and saturation.
hydrodynamical models for semiconductors; GaAs; maximum entropy Principle
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/2031
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