We report here a detailed study about the formation and self-organization of nanoscale structures during ion beam implantation at room temperature of 300 keV Ge+ in Ge as a function of the ion fluence in the range between 1x1014 to 4x1016 cm−2. “Microexplosions” characterize themorphology of the swelled material; a random cellular structure consisting of cells surrounded by amorphous Ge ripples has been observed and studied in details by combining atomic force microscopy, scanning electron microscopy, and transmission electron microscopy.
|Titolo:||Nanostructuring in Ge by self-ion implantation|
|Data di pubblicazione:||2010|
|Appare nelle tipologie:||1.1 Articolo in rivista|