Hydrodynamical models are suitable to describe carrier transport in submicron semiconductor devices. These models have the form of nonlinear systems of hyperbolic conservation laws with source terms, coupled with Poisson’s equation. In this article we examine the suitability of a high resolution centered numerical scheme for the solution of the hyperbolic part of these extended models, in one space dimension.
Assessment of a high resolution centered scheme for the solution of hydrodynamical semiconductor equations
PIDATELLA, Rosa Maria
2000-01-01
Abstract
Hydrodynamical models are suitable to describe carrier transport in submicron semiconductor devices. These models have the form of nonlinear systems of hyperbolic conservation laws with source terms, coupled with Poisson’s equation. In this article we examine the suitability of a high resolution centered numerical scheme for the solution of the hyperbolic part of these extended models, in one space dimension.File in questo prodotto:
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