Conductive atomic force microscopy has been used to measure the I–V characteristics of nanometric Au clusters embedded in a SiO2 film prepared by sputter deposition and low temperature annealing. Highly local asymmetric rectifier I–V characteristics were evidenced and modelled in terms of electrical transport through an asymmetric double barrier tunnel junction SiO2/Au cluster/SiO2. The threshold voltage depends strongly on the cluster size and barrier thickness according to the model given.

Structural and electrical characterization of gold nanoclusters in SiO2 films: realization of a nanoscale tunnel rectifier

RUFFINO, FRANCESCO;GRIMALDI, Maria Grazia
2007-01-01

Abstract

Conductive atomic force microscopy has been used to measure the I–V characteristics of nanometric Au clusters embedded in a SiO2 film prepared by sputter deposition and low temperature annealing. Highly local asymmetric rectifier I–V characteristics were evidenced and modelled in terms of electrical transport through an asymmetric double barrier tunnel junction SiO2/Au cluster/SiO2. The threshold voltage depends strongly on the cluster size and barrier thickness according to the model given.
Nanoscale rectifying diode; Au nanoparticles; SiO2
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/24585
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