Solutions of a new 2d semiconductor numerical model describing the electron transport in semiconductors coupled with the heating of the crystal lattice are presented. The model equations have been obtained with the use of the maximum entropy principle. Numerical simulations of a nanoscale MOSFET and inverter circuit are presented and the influence of self-heating on the electrical characteristics is analyzed.
|Titolo:||Numerical simulation of coupled electron devices and circuits by the MEP hydrodynamical model for semiconductors with crystal heating|
|Data di pubblicazione:||2010|
|Citazione:||Numerical simulation of coupled electron devices and circuits by the MEP hydrodynamical model for semiconductors with crystal heating / ROMANO V; RUSAKOV A. - In: NUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. C, GEOPHYSICS AND SPACE PHYSICS. - ISSN 1826-9885. - 33:1(2010), pp. 223-230.|
|Appare nelle tipologie:||1.1 Articolo in rivista|