The symmetric classification of the drift-diffusion models for semiconductors was carried out. The original system of PDEs representing the model was reduced to ODEs. The drift-diffusion model provided a useful benchmark solution for testing the numerical code simulating electron devices. The theoretical foundation of the drift-diffusion models based on the moment method was applied to the Boltzmann transport equation for charge carriers.
Symmetry analysis and exact solutions for the drift-diffusion model of semiconductors
ROMANO, Vittorio;
2004-01-01
Abstract
The symmetric classification of the drift-diffusion models for semiconductors was carried out. The original system of PDEs representing the model was reduced to ODEs. The drift-diffusion model provided a useful benchmark solution for testing the numerical code simulating electron devices. The theoretical foundation of the drift-diffusion models based on the moment method was applied to the Boltzmann transport equation for charge carriers.File in questo prodotto:
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