The symmetric classification of the drift-diffusion models for semiconductors was carried out. The original system of PDEs representing the model was reduced to ODEs. The drift-diffusion model provided a useful benchmark solution for testing the numerical code simulating electron devices. The theoretical foundation of the drift-diffusion models based on the moment method was applied to the Boltzmann transport equation for charge carriers.
|Titolo:||Symmetry analysis and exact solutions for the drift-diffusion model of semiconductors|
|Data di pubblicazione:||2004|
|Appare nelle tipologie:||1.1 Articolo in rivista|