A mixed finite element scheme is used to simulate a consistent energy-transport model for electron transport in semiconductor devices, free of any fitting parameters, formulated on the basis of the maximum entropy principle. Simulations of silicon n+-n-n+ diodes, 2D-MESFET and 2D-MOSFET and comparisons with the results obtained with Monte Carlo direct simulation and with other energy-transport models, known in literature, show the validity of the model and the robustness of the numerical scheme.

2D Numerical simulation of the MEP energy-transport model with a mixed finite elemnt scheme

ROMANO, Vittorio;
2005

Abstract

A mixed finite element scheme is used to simulate a consistent energy-transport model for electron transport in semiconductor devices, free of any fitting parameters, formulated on the basis of the maximum entropy principle. Simulations of silicon n+-n-n+ diodes, 2D-MESFET and 2D-MOSFET and comparisons with the results obtained with Monte Carlo direct simulation and with other energy-transport models, known in literature, show the validity of the model and the robustness of the numerical scheme.
energy-transport models; maximum entropy principle; finite elements; semiconduttori
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/26121
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