A mixed finite element scheme is used to simulate a consistent energy-transport model for electron transport in semiconductor devices, free of any fitting parameters, formulated on the basis of the maximum entropy principle. Simulations of silicon n+-n-n+ diodes, 2D-MESFET and 2D-MOSFET and comparisons with the results obtained with Monte Carlo direct simulation and with other energy-transport models, known in literature, show the validity of the model and the robustness of the numerical scheme.
|Titolo:||2D Numerical simulation of the MEP energy-transport model with a mixed finite elemnt scheme|
|Data di pubblicazione:||2005|
|Appare nelle tipologie:||1.1 Articolo in rivista|