Dynamic scaling behavior has been observed during the room-temperature growth of sputtered Pd films on SiO2 using the scanning electron microscopy technique. By the analyses of the dependence of the Pd grain size and surface density on the film thickness, the dynamical growth exponent z =4.20.3 was obtained, suggesting a conservative growth process. The analysis of the fraction of surface covered by Pd as a function of film thickness up to a maximum of 8.51016 atoms/cm2, corresponding to 125 nm allowed us to identify two different growth regimes in the investigated range: films thinner than 1.81016 atoms/cm2 26.5 nm that grow as an outside-cluster system and thicker film that exhibit an islandlike growth.
|Titolo:||Room-temperature grain growth in sputtered nanoscale Pd thin films: dynamic scaling on SiO2|
|Data di pubblicazione:||2009|
|Citazione:||Room-temperature grain growth in sputtered nanoscale Pd thin films: dynamic scaling on SiO2 / RUFFINO F; IRRERA A; DE BASTIANI R; GRIMALDI M. G. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 106(2009), pp. 084309-1-084309-4.|
|Appare nelle tipologie:||1.1 Articolo in rivista|