Conductive-atomic force microscopy is used to electrically characterize a nanometric metal- SiO2–Si n+ system with Au nanocluster inclusions in SiO2. The system shows a marked rectifying behavior at room temperature with a threshold voltage function of the cluster size. This behavior is interpreted crossing physical considerations on metal-oxide-semiconductor structure and on double barrier tunnel junction device. The system fabricated and analyzed is proposed as a possible basic component for nanoelectronic circuits working at room temperature.
|Titolo:||Nanoscale voltage tunable rectifier by gold nanostructures embedded in SiO2|
|Data di pubblicazione:||2006|
|Appare nelle tipologie:||1.1 Articolo in rivista|