Conductive-atomic force microscopy is used to electrically characterize a nanometric metal-SiO2–Si n+ system with Au nanocluster inclusions in SiO2. The system shows a marked rectifyingbehavior at room temperature with a threshold voltage function of the cluster size. This behavior isinterpreted crossing physical considerations on metal-oxide-semiconductor structure and on doublebarrier tunnel junction device. The system fabricated and analyzed is proposed as a possible basiccomponent for nanoelectronic circuits working at room temperature.

Nanoscale voltage tunable rectifier by gold nanostructures embedded in SiO2

RUFFINO, FRANCESCO;GRIMALDI, Maria Grazia
2006-01-01

Abstract

Conductive-atomic force microscopy is used to electrically characterize a nanometric metal-SiO2–Si n+ system with Au nanocluster inclusions in SiO2. The system shows a marked rectifyingbehavior at room temperature with a threshold voltage function of the cluster size. This behavior isinterpreted crossing physical considerations on metal-oxide-semiconductor structure and on doublebarrier tunnel junction device. The system fabricated and analyzed is proposed as a possible basiccomponent for nanoelectronic circuits working at room temperature.
Double barrier tunnel junction; Au nanoparticles; SiO2
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/26474
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