In this paper a hydrodynamic model for electron and phonon transport in silicon semiconductors has been formulated on the basis of the maximum entropy principle to describe off-equilibrium phenomena in submicron devices. One dimensional steady-state simulations of a n+−n−n+ silicon diode have been carried out
Modeling heat generation in a submicrometric n+ - n - n+ silicon diode
MUSCATO, Orazio;DI STEFANO, VINCENZA
2008-01-01
Abstract
In this paper a hydrodynamic model for electron and phonon transport in silicon semiconductors has been formulated on the basis of the maximum entropy principle to describe off-equilibrium phenomena in submicron devices. One dimensional steady-state simulations of a n+−n−n+ silicon diode have been carried outFile in questo prodotto:
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