In this paper a hydrodynamic model for electron and phonon transport in silicon semiconductors has been formulated on the basis of the maximum entropy principle to describe off-equilibrium phenomena in submicron devices. One dimensional steady-state simulations of a n+−n−n+ silicon diode have been carried out

Modeling heat generation in a submicrometric n+ - n - n+ silicon diode

MUSCATO, Orazio;DI STEFANO, VINCENZA
2008

Abstract

In this paper a hydrodynamic model for electron and phonon transport in silicon semiconductors has been formulated on the basis of the maximum entropy principle to describe off-equilibrium phenomena in submicron devices. One dimensional steady-state simulations of a n+−n−n+ silicon diode have been carried out
hydrodynamic models; semiconductors; Irreversible thermodynamics; Finite difference methods
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/27142
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