The electrical resistivity and Hall coefficient of C49, C40, and C54 TiSi2 thin films were studied in the temperature range of 4-350 K. The residual resistivity was the highest (52-72 muOmega cm) for the C49 phase, lower for the C40 (22-33 muOmega cm), and the lowest for the C54 phase (2.8-3.8 muOmega cm). On the other hand, the Debye temperature decreases from the C54 phase (470-490 K), to the C49 (451 K), and finally to the C40 phase (420 K). The Hall coefficient of the C49 and C40 phases exhibits a temperature independent value. A change of sign for the Hall coefficient occurs in the case of C54 at a temperature of about 80 K indicating that a multicarrier conduction mechanism exists in C54 TiSi2. The value of the scattering length l(e) for the C54 samples is two to three times larger than for the C49 and C40 samples. This difference in the scattering length is suggested to be due to the presence of intrinsic defects in the C49 and C40 phases and/or to the large amount of grain boundaries. (C) 2002 American Institute of Physics.
|Titolo:||Electrical resistivity and Hall coefficient of C49, C40, and C54TiSi(2) thin-film phases|
|Data di pubblicazione:||2002|
|Citazione:||Electrical resistivity and Hall coefficient of C49, C40, and C54TiSi(2) thin-film phases / MAMMOLITI F; GRIMALDI M; LA VIA F. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 92:6(2002), pp. 3147-3151.|
|Appare nelle tipologie:||1.1 Articolo in rivista|