Low-temperature photoluminescence (PL) spectra of 100 keV He+-implanted n-InP single crystals as well as of 5 MeV α-irradiated n-InP crystals and epilayers have been studied. The radiation-treatment-induced decrease in intensity of bound-excitonic emission was found to be more pronounced than that of free-exciton recombination and luminescence related to deep levels. A new band at 1.399 eV was observed in α-irradiated InP epilayers and attributed to defect complexes involving Inp antisite. The influence of post-implantation annealing in the temperature interval 400 to 750 °C upon PL characteristics of He+-implanted n-InP crystals is reported
Photoluminescence study of growth-related and processing-induced defects in indium phosphide
ZAPPIA, MARIO;
1996-01-01
Abstract
Low-temperature photoluminescence (PL) spectra of 100 keV He+-implanted n-InP single crystals as well as of 5 MeV α-irradiated n-InP crystals and epilayers have been studied. The radiation-treatment-induced decrease in intensity of bound-excitonic emission was found to be more pronounced than that of free-exciton recombination and luminescence related to deep levels. A new band at 1.399 eV was observed in α-irradiated InP epilayers and attributed to defect complexes involving Inp antisite. The influence of post-implantation annealing in the temperature interval 400 to 750 °C upon PL characteristics of He+-implanted n-InP crystals is reported| File | Dimensione | Formato | |
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