Large area microcrystalline and polycrystalline SiC thin films have been grown by electron cyclotron resonance CVD over (100) silicon wafers, The samples have been characterized by X-ray diffractometry (XRD), transmission electron microscopy (TEM), micro-Raman and photo luminescence spectroscopy. Stoichiometric SiC films containing 3C-SiC crystals with orientation close to that of Si substrate and lateral grain dimension up to 1400 Angstrom were obtained under suitable deposition conditions. They also exhibit blue photoluminescence at room temperature in the range of 400-450 nm with features dependent on their structure. (C) 2901 Elsevier Science B.V. All rights reserved.
|Titolo:||Optical and structural properties of SiC layers grown by an electron cyclotron resonance CVD technique|
|Data di pubblicazione:||2001|
|Appare nelle tipologie:||1.1 Articolo in rivista|