Difficulties with the incorporation of SiGe epitaxial growth technologies into established silicon whole wafer processes are delaying the commercialisation of SiGe technology. In this paper the possibility of using an alternative, well proven technology, namely ion implantation, is considered. Experiments reported in the literature suggest that both strained and relaxed device worthy SiGe layers, with graded interfaces, can be synthesised by Ge+ ion implantation followed by a two step thermal anneal to achieve solid phase epitaxial growth and annihilation of electrically active defects. It is concluded that for specific device architectures both heterojunction bipolar and MOS devices could be commercially realised whilst other applications, such as buried SiGe waveguides and devices incorporating compositionally graded layers, may also be viable. The technology warrants further investigation.
Ge+ ion implantation - A competing technology?
PRIOLO, Francesco;
1995-01-01
Abstract
Difficulties with the incorporation of SiGe epitaxial growth technologies into established silicon whole wafer processes are delaying the commercialisation of SiGe technology. In this paper the possibility of using an alternative, well proven technology, namely ion implantation, is considered. Experiments reported in the literature suggest that both strained and relaxed device worthy SiGe layers, with graded interfaces, can be synthesised by Ge+ ion implantation followed by a two step thermal anneal to achieve solid phase epitaxial growth and annihilation of electrically active defects. It is concluded that for specific device architectures both heterojunction bipolar and MOS devices could be commercially realised whilst other applications, such as buried SiGe waveguides and devices incorporating compositionally graded layers, may also be viable. The technology warrants further investigation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
