(100) oriented Si substrates were implanted with 70 keV Ge ions at a dose of 3 X 10(16) cm-2, corresponding to a Ge peak concentration of almost-equal-to 15 at. %. Annealing at 1100-degrees-C for 10 s forms a large density of secondary defects (dislocation loops). A 30 keV C implant at a dose of 3 X 10(15) cm-2 on the Ge implanted samples suppresses the formation of secondary defects after the annealing. In GexSi1-x layers implanted with 30 keV B at a dose of 2.5 X 10(15) cm-2, a dense dislocation network after annealing is present. Therefore C is much more effective in the suppression of secondary defects than B. In addition, it is shown that good epitaxial quality can be obtained in the heavily B doped GexSi1-x, layers amorphizing a 2 mum thick surface layer by high energy Si implants prior to annealing.
REDUCTION OF SECONDARY DEFECT DENSITY BY C-IMPLANT AND B-IMPLANT IN GEXSI1-X LAYERS FORMED BY HIGH-DOSE GE IMPLANTATION IN (100) SI
PRIOLO, Francesco;
1993-01-01
Abstract
(100) oriented Si substrates were implanted with 70 keV Ge ions at a dose of 3 X 10(16) cm-2, corresponding to a Ge peak concentration of almost-equal-to 15 at. %. Annealing at 1100-degrees-C for 10 s forms a large density of secondary defects (dislocation loops). A 30 keV C implant at a dose of 3 X 10(15) cm-2 on the Ge implanted samples suppresses the formation of secondary defects after the annealing. In GexSi1-x layers implanted with 30 keV B at a dose of 2.5 X 10(15) cm-2, a dense dislocation network after annealing is present. Therefore C is much more effective in the suppression of secondary defects than B. In addition, it is shown that good epitaxial quality can be obtained in the heavily B doped GexSi1-x, layers amorphizing a 2 mum thick surface layer by high energy Si implants prior to annealing.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
