(100) oriented Si substrates were implanted with 70 keV Ge ions at a dose of 3 X 10(16) cm-2, corresponding to a Ge peak concentration of almost-equal-to 15 at. %. Annealing at 1100-degrees-C for 10 s forms a large density of secondary defects (dislocation loops). A 30 keV C implant at a dose of 3 X 10(15) cm-2 on the Ge implanted samples suppresses the formation of secondary defects after the annealing. In GexSi1-x layers implanted with 30 keV B at a dose of 2.5 X 10(15) cm-2, a dense dislocation network after annealing is present. Therefore C is much more effective in the suppression of secondary defects than B. In addition, it is shown that good epitaxial quality can be obtained in the heavily B doped GexSi1-x, layers amorphizing a 2 mum thick surface layer by high energy Si implants prior to annealing.

REDUCTION OF SECONDARY DEFECT DENSITY BY C-IMPLANT AND B-IMPLANT IN GEXSI1-X LAYERS FORMED BY HIGH-DOSE GE IMPLANTATION IN (100) SI

PRIOLO, Francesco;
1993-01-01

Abstract

(100) oriented Si substrates were implanted with 70 keV Ge ions at a dose of 3 X 10(16) cm-2, corresponding to a Ge peak concentration of almost-equal-to 15 at. %. Annealing at 1100-degrees-C for 10 s forms a large density of secondary defects (dislocation loops). A 30 keV C implant at a dose of 3 X 10(15) cm-2 on the Ge implanted samples suppresses the formation of secondary defects after the annealing. In GexSi1-x layers implanted with 30 keV B at a dose of 2.5 X 10(15) cm-2, a dense dislocation network after annealing is present. Therefore C is much more effective in the suppression of secondary defects than B. In addition, it is shown that good epitaxial quality can be obtained in the heavily B doped GexSi1-x, layers amorphizing a 2 mum thick surface layer by high energy Si implants prior to annealing.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/28775
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