The annealing of low-fluence heavy-ion damaged Si crystals induced by ion-assisted treatments is reported. Damage was produced by 150 keV Au implantations at a dose of 2 x 10(13) ions/cm2 onto <100> oriented Si single crystals and resulted in small amorphous-like regions surrounded by crystal material. The interaction of these damaged structures with defects induced by energetic ions (600 keV Kr2+) was investigated. Kr post-irradiation resulted in either damage accumulation or annealing, depending on the substrate temperature. A transition temperature of about 420 K was found between these two different regimes. Ion-assisted processes are discussed and explained on the basis of the damage morphology.
EVOLUTION OF LOW-FLUENCE HEAVY-ION DAMAGE IN SI UNDER HIGH-ENERGY ION IRRADIATION
PRIOLO, Francesco;
1991-01-01
Abstract
The annealing of low-fluence heavy-ion damaged Si crystals induced by ion-assisted treatments is reported. Damage was produced by 150 keV Au implantations at a dose of 2 x 10(13) ions/cm2 onto <100> oriented Si single crystals and resulted in small amorphous-like regions surrounded by crystal material. The interaction of these damaged structures with defects induced by energetic ions (600 keV Kr2+) was investigated. Kr post-irradiation resulted in either damage accumulation or annealing, depending on the substrate temperature. A transition temperature of about 420 K was found between these two different regimes. Ion-assisted processes are discussed and explained on the basis of the damage morphology.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
