SiC detector characterization for radiation emitted by laser-generated plasmas

SiC detectors based on Schottky barrier junction with depletion layer of about 60 µm can be employed to monitor the radiations emitted from laser-generated plasmas. On the base of the detector geometry UV and X-rays, ions and electrons can be detected with high efficiency at energies of the order of 10 keV, 1-100 MeV and 100 keV respectively. Detector response is proportional to the energy deposited in the depletion layer with an energy resolution comparable with the traditional Silicon detectors. The use of time-of-flight (TOF) techniques permits to measure the velocity of electrons and ions also in condition of low detection efficiency. Such detectors can be employed with success for fast plasma diagnostics detecting photons, electrons and ions. Measurements of SiC characterization, by using calibrated X-rays, electrons and ion sources and laser-generated plasmas, at intensity raging between 1010 Wcm−2 and 1016 Wcm−2 , will be presented and discussed