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EnglishWhen a Ta layer is deposited at the Si-Ti interface a new phase has been detected, i.e., the TiSi2, C40. The C40-C54 transformation kinetics and the film morphology are consistent with an increase of the nucleation density with respect to the C49-C54 transition, The activation energies for the nucleation rate (4.2 +/- 0.3 eV) and the growth velocity (4.0 +/- 0.4 eV) have been obtained from the in situ sheet resistance and the transmission electron microscopy results. These results show that the process with a Ta layer at the Ti-Si interface has a greater scalability with respect to the standard TiSi2, process. (C) 2002 Elsevier Science B.V. All rights reserved.
| Titolo: | Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and scalability of the TiSi2 process | |
| Autori interni: | ||
| Data di pubblicazione: | 2002 | |
| Rivista: | ||
| Handle: | http://hdl.handle.net/20.500.11769/3000 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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