The modifications occurring in the defect structure of ion implanted amorphous silicon below room temperature have been probed by Raman spectroscopy. Amorphous silicon layers were irradiated at 77 K by 3 keV He+ ions and analyzed in situ by Raman spectroscopy. This low-temperature ion irradiation produces a shift in the transversal optical (TO) peak position from 471 to 463 cm-1 and a broadening in its halfwidth from 43 to 50 cm-1. Moreover after an annealing at 300 K the vibrational properties come back to their initial state. It is speculated that the modifications induced by low-temperature ion irradiation are associated with the production and annihilation of highly mobile defects.
LOW-TEMPERATURE MODIFICATIONS IN THE DEFECT STRUCTURE OF AMORPHOUS-SILICON PROBED BY IN-SITU RAMAN-SPECTROSCOPY
PRIOLO, Francesco;COMPAGNINI, Giuseppe Romano;
1993-01-01
Abstract
The modifications occurring in the defect structure of ion implanted amorphous silicon below room temperature have been probed by Raman spectroscopy. Amorphous silicon layers were irradiated at 77 K by 3 keV He+ ions and analyzed in situ by Raman spectroscopy. This low-temperature ion irradiation produces a shift in the transversal optical (TO) peak position from 471 to 463 cm-1 and a broadening in its halfwidth from 43 to 50 cm-1. Moreover after an annealing at 300 K the vibrational properties come back to their initial state. It is speculated that the modifications induced by low-temperature ion irradiation are associated with the production and annihilation of highly mobile defects.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
