Erbium silicate thin films that have a good morphology are synthesized by radiofrequency magnetron sputtering. Properly annealed films exhibit efficient luminescence at 1535 nm, and all of the Er ions in the material (about 10(22) cm(-3)) are demonstrated to be optically active. The possibility to efficiently excite Er ions also through electron-hole mediated processes is demonstrated in nanometer-scale Er-Si-O/Si multilayers (see figure). The results are relevant to the improvement of silicon-based devices.
Titolo: | Efficient luminescence and energy transfer in erbium silicate thin films |
Autori interni: | |
Data di pubblicazione: | 2007 |
Rivista: | |
Handle: | http://hdl.handle.net/20.500.11769/31959 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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