A Silicon carbide detector, based on a Schottky diode technology with an interdigitated front electrode design, was employed to monitor photons and low-energy ions. Photons were generated by a He-Cd laser with maximum optical power density of 64 mW/cm(2), while a plasma generated by a pulsed laser at low intensity (10(10) W/cm(2)), was used to produce low-energy Al and C ions. The measured detector yield in the case of the photon detection increases linearly with the optical power density, and shows saturation at high power densities, being the saturation value depending on the applied detector bias. A similar behavior is observed for ion detection, where the detector response saturates with increasing ion energy. Carrier generation rate was extracted from the experimental data obtaining almost equal values for photon and ion irradiations, allowing also to extract a maximum generation rate of about 8 x 10(19) carriers/cm(3). s as upper limit for the linear operation of the detector.

4H-SiC Detector in High Photons and Ions Irradiation Regime

SCIUTO, Antonella
Membro del Collaboration Group
;
G. D'Arrigo
Membro del Collaboration Group
;
L. Calcagno
2018

Abstract

A Silicon carbide detector, based on a Schottky diode technology with an interdigitated front electrode design, was employed to monitor photons and low-energy ions. Photons were generated by a He-Cd laser with maximum optical power density of 64 mW/cm(2), while a plasma generated by a pulsed laser at low intensity (10(10) W/cm(2)), was used to produce low-energy Al and C ions. The measured detector yield in the case of the photon detection increases linearly with the optical power density, and shows saturation at high power densities, being the saturation value depending on the applied detector bias. A similar behavior is observed for ion detection, where the detector response saturates with increasing ion energy. Carrier generation rate was extracted from the experimental data obtaining almost equal values for photon and ion irradiations, allowing also to extract a maximum generation rate of about 8 x 10(19) carriers/cm(3). s as upper limit for the linear operation of the detector.
Photon detection; plasma monitoring; silicon carbide (SiC) Schottky diode; solid-state detector
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/319591
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