We report on the structure and performance of 4H-SiC p+-n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm2at 30-V reverse bias and a breakdown voltage of 88 V were observed. A gain as high as 105was measured at 94-V reverse bias, confirming the avalanche multiplication working condition. The maximum responsivity value was measured at 270 nm, increasing from 0.06 A/W (QE = 29%) at 0-V bias to 0.10 A/W (QE of about 45%) at 30-V reverse bias.

Fully Planar 4H-SiC Avalanche Photodiode with Low Breakdown Voltage

Lenzi, P.;Albergo, S.;Tricomi, A.;
2017

Abstract

We report on the structure and performance of 4H-SiC p+-n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm2at 30-V reverse bias and a breakdown voltage of 88 V were observed. A gain as high as 105was measured at 94-V reverse bias, confirming the avalanche multiplication working condition. The maximum responsivity value was measured at 270 nm, increasing from 0.06 A/W (QE = 29%) at 0-V bias to 0.10 A/W (QE of about 45%) at 30-V reverse bias.
4H-SiC; APD photodiodes; ion implantation; planar technology; shallow junction; UV detectors; Instrumentation; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/322790
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