Optical properties of semi-insulating polycrystalline silicon (SIPOS) thin films containing 30 at. % oxygen atoms are investigated in the near ultraviolet, visible and infrared region to improve knowledge on the structure and chemical bonding of these mixtures. An effective medium approximation model is used for a microscopic investigation of the oxide species involved as a function of the annealing temperature (600-1200 degrees C). The results are compared with other optical spectroscopies (infrared and Raman) and with transmission electron microscopy to give a selected picture of the pure and oxide components
OPTICAL AND STRUCTURAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON THIN-FILMS
COMPAGNINI, Giuseppe Romano;REITANO, Riccardo;
1995-01-01
Abstract
Optical properties of semi-insulating polycrystalline silicon (SIPOS) thin films containing 30 at. % oxygen atoms are investigated in the near ultraviolet, visible and infrared region to improve knowledge on the structure and chemical bonding of these mixtures. An effective medium approximation model is used for a microscopic investigation of the oxide species involved as a function of the annealing temperature (600-1200 degrees C). The results are compared with other optical spectroscopies (infrared and Raman) and with transmission electron microscopy to give a selected picture of the pure and oxide componentsFile in questo prodotto:
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