The lattice location of B in Si has been investigated by channelling analyses using nuclear reactions (650 keV proton beam, B-11(p,alpha)Be-8). The formation at room temperature of a specific, small B complex in presence of an excess of point defects has been inferred. In particular, B implanted in Si or B substitutional dissolved in Si and irradiated with proton beam form a unique B complex with B atoms not randomly located. The angular scans along the < 100 > and < 110 > axes are compatible with B-B pairs aligned along the < 100 > axis. The thermal annealing in the 200-950 degrees C range of the B complexes, analyzed by lattice location and carrier concentration measurements, depends on the residual defect density in the lattice. The B complexes dissolve at low temperature if no excess of Si self-interstitials (Is) exists or they evolve into large B clusters and then dissolve at high temperature if Is supersaturation holds. (C) 2005 American Institute of Physics.
|Titolo:||Lattice location and thermal evolution of small B complexes in crystalline Si|
|Data di pubblicazione:||2005|
|Citazione:||Lattice location and thermal evolution of small B complexes in crystalline Si / L. ROMANO; A. M. PIRO; S. MIRABELLA; GRIMALDI M; E. RIMINI. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 87:20(2005), pp. 201905-201907.|
|Appare nelle tipologie:||1.1 Articolo in rivista|