Calcium copper titanate, CaCU3Ti4O12 (CCTO), thin films have been fabricated by Metal Organic Chemical Vapor Deposition on silicon substrates buffered with two different low-k interlayers, namely SiO2 and Si3N4. Depositions have been carried out from a molten mixture consisting of the Ca (hfa)2 center dot tetraglyme, Ti(tmhd)(2)(O-iPr)(2), and Cu(tmhd)(2) [Hhfa=1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme=2,5,8,11,14-pentaoxapentadecane; Htmhd=2,2,6,6-tetramethyl-3,5-heptandione; O-iPr=iso-propoxide] precursors. The chemical stability of CCTO films on both the SiO2 and Si3N4 low-k layers has been investigated by transmission electron microscopy in the perspective of their implementation in capacitor devices. (C) 2006 Elsevier B.V. All rights reserved.
|Titolo:||Chemical stability of CaCu3Ti4O12 thin films grown by MOCVD on different substrates|
|Data di pubblicazione:||2007|
|Appare nelle tipologie:||1.1 Articolo in rivista|