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EnglishCalcium copper titanate, CaCU3Ti4O12 (CCTO), thin films have been fabricated by Metal Organic Chemical Vapor Deposition on silicon substrates buffered with two different low-k interlayers, namely SiO2 and Si3N4. Depositions have been carried out from a molten mixture consisting of the Ca (hfa)2 center dot tetraglyme, Ti(tmhd)(2)(O-iPr)(2), and Cu(tmhd)(2) [Hhfa=1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme=2,5,8,11,14-pentaoxapentadecane; Htmhd=2,2,6,6-tetramethyl-3,5-heptandione; O-iPr=iso-propoxide] precursors. The chemical stability of CCTO films on both the SiO2 and Si3N4 low-k layers has been investigated by transmission electron microscopy in the perspective of their implementation in capacitor devices. (C) 2006 Elsevier B.V. All rights reserved.
| Titolo: | Chemical stability of CaCu3Ti4O12 thin films grown by MOCVD on different substrates |
| Autori interni: | |
| Data di pubblicazione: | 2007 |
| Rivista: | |
| Citazione: | Chemical stability of CaCu3Ti4O12 thin films grown by MOCVD on different substrates / Lo Nigro R; Toro RG; Malandrino G; Fragala IL; Fiorenza P; Raineri V. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 515:16(2007), pp. 6470-6473. |
| Handle: | http://hdl.handle.net/20.500.11769/33302 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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