An optimal control approach based on the adjoint method is performed for the design of a semiconductor device by using a consistent energy transport model, free of any fitting parameters, formulated on the basis of the maximum entropy principle in Romano (2001). The design objective consists in adjusting the current at some given Ohmic contact via a change in the reference doping profile. At the contact, we prescribe the desired current and allow deviations, measured with a suitable norm, of the doping profile in order to achieve the desidered current flow. Optimal design of silicon n+–n–n+diodes and comparisons with the results obtained by using some standard energy transport models, known in literature, show the robustness of the approach.
|Titolo:||Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model|
DRAGO, CONCETTINA RITA (Corresponding)
|Data di pubblicazione:||2017|
|Appare nelle tipologie:||1.1 Articolo in rivista|