Amorphization process associated with cluster implants has been studied by cross-sectional transmission electron microscopy for P4 cluster implants (5 keV equivalent monomer energy) as a function of dose and compared to that of monomer P implant at the same equivalent energy. Amorphous pockets are formed by the cluster implant at doses of as low as 6× 1013 / cm2, and a continuous amorphous layer is formed at dose of 2× 1014 / cm2. The reduction by about 2.5 times in amorphization threshold by clusters with respect to the monomer implant is a consequence of the simultaneous deposition of energy carried by the atoms in the clusters, which enhances the damage yield in the overlapped collision cascades.
Amorphization of Si using cluster ions
Romano L.
Primo
;
2009-01-01
Abstract
Amorphization process associated with cluster implants has been studied by cross-sectional transmission electron microscopy for P4 cluster implants (5 keV equivalent monomer energy) as a function of dose and compared to that of monomer P implant at the same equivalent energy. Amorphous pockets are formed by the cluster implant at doses of as low as 6× 1013 / cm2, and a continuous amorphous layer is formed at dose of 2× 1014 / cm2. The reduction by about 2.5 times in amorphization threshold by clusters with respect to the monomer implant is a consequence of the simultaneous deposition of energy carried by the atoms in the clusters, which enhances the damage yield in the overlapped collision cascades.| File | Dimensione | Formato | |
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