The early oxidation stages of hydrogen-terminated single-crystalline (100) silicon exposed to a diluted N(2) : N(2)O atmosphere at 850degreesC for different durations have been studied by x-ray photoemission spectroscopy, following the evolution of the Si 2p signal. Evidence is given that the usual analysis, in terms of five pairs of peaks attributed to silicon in the oxidation states from 0 to +4, does not account for the observed Si 2p signal. An explanation for silicon in unusual oxidation states is proposed.
|Titolo:||X-ray-photoemission-spectroscopy evidence for anomalous oxidation states of silicon after exposure of hydrogen-terminated single-crystalline (100) silicon to a diluted N(2) : N(2)O atmosphere|
|Data di pubblicazione:||2002|
|Appare nelle tipologie:||1.1 Articolo in rivista|