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EnglishThe influence of vanadium doping on the electronic structure of SnO2 has been studied by a range of techniques including X-ray and ultraviolet photoemission spectroscopy, as well as IR reflectance and magnetic susceptibility measurements. In contrast to Sb, V does not act as a shallow n-type dopant in SnO2 and V substitution appears to be largely compensated by cation vacancies or oxygen interstitials. However, a state is apparent in ultraviolet photoemission toward the bottom of the bulk bandgap of SnO2. This corresponds to electrons trapped on V-IV ions close to the surface of the doped material. The binding energy of the V-IV state in doped SnO2 is compared with that in V-doped TiO2 and the differences between the two materials are shown to be consistent with a simple dielectric model.
| Titolo: | NATURE OF DONOR STATES IN V-DOPED SNO2 | |
| Autori interni: | ||
| Data di pubblicazione: | 1995 | |
| Rivista: | ||
| Handle: | http://hdl.handle.net/20.500.11769/35157 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/20.500.11769/35157
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