Ion implantation has been used to dope single-crystal TiO2(110) in the near-surface region, The Sb dopant quenches an electronic state at about 1 eV binding energy usually observed in photoemission from undoped TiO2 and produces a new electronic surface state toward the bottom of the bulk bandgap. This is attributed to a 5s-5p hybrid orbital localised on surface Sb ions.

A PHOTOEMISSION-STUDY OF ELECTRON-STATES IN SB-ION IMPLANTED TIO2(110)

GULINO, Antonino;
1995-01-01

Abstract

Ion implantation has been used to dope single-crystal TiO2(110) in the near-surface region, The Sb dopant quenches an electronic state at about 1 eV binding energy usually observed in photoemission from undoped TiO2 and produces a new electronic surface state toward the bottom of the bulk bandgap. This is attributed to a 5s-5p hybrid orbital localised on surface Sb ions.
TiO2; doping; UPS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/35168
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