Ion implantation has been used to dope single-crystal TiO2(110) in the near-surface region, The Sb dopant quenches an electronic state at about 1 eV binding energy usually observed in photoemission from undoped TiO2 and produces a new electronic surface state toward the bottom of the bulk bandgap. This is attributed to a 5s-5p hybrid orbital localised on surface Sb ions.
A PHOTOEMISSION-STUDY OF ELECTRON-STATES IN SB-ION IMPLANTED TIO2(110)
GULINO, Antonino;
1995-01-01
Abstract
Ion implantation has been used to dope single-crystal TiO2(110) in the near-surface region, The Sb dopant quenches an electronic state at about 1 eV binding energy usually observed in photoemission from undoped TiO2 and produces a new electronic surface state toward the bottom of the bulk bandgap. This is attributed to a 5s-5p hybrid orbital localised on surface Sb ions.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
