2d numerical solutions of a new macroscopic model describing the electron transport in semiconductors coupled with the heating of the crystal lattice are presented. The model has been obtained with the use of the maximum entropy principle. Numerical simulations of a nanoscale MOSFET are presented and the influence of self heating on the electrical characteristics is analyzed.
|Titolo:||2d numerical simulations of an electron–phonon hydrodynamical model based on the maximum entropy principle|
|Data di pubblicazione:||2010|
|Citazione:||2d numerical simulations of an electron–phonon hydrodynamical model based on the maximum entropy principle / ROMANO V; RUSAKOV A. - In: COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING. - ISSN 0045-7825. - 199:41-44(2010), pp. 2741-2751.|
|Appare nelle tipologie:||1.1 Articolo in rivista|