2d numerical solutions of a new macroscopic model describing the electron transport in semiconductorscoupled with the heating of the crystal lattice are presented. The model has been obtained with the use ofthe maximum entropy principle. Numerical simulations of a nanoscale MOSFET are presented and theinfluence of self heating on the electrical characteristics is analyzed.
2d numerical simulations of an electron–phonon hydrodynamical model based on the maximum entropy principle
ROMANO, Vittorio;
2010-01-01
Abstract
2d numerical solutions of a new macroscopic model describing the electron transport in semiconductorscoupled with the heating of the crystal lattice are presented. The model has been obtained with the use ofthe maximum entropy principle. Numerical simulations of a nanoscale MOSFET are presented and theinfluence of self heating on the electrical characteristics is analyzed.File in questo prodotto:
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