In this paper, we present the extensive characterization of large-area silicon carbide-based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit a dark current density of 0.12 nA/cm(2) at 15 V, a 0.12-A/W responsivity at 300 nm, optimal visible blindness, and a switching time of similar to 190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 degrees C to 90 degrees C.
Titolo: | Large area SiC-UV phothodiode for spectroscopy portable system |
Autori interni: | |
Data di pubblicazione: | 2019 |
Rivista: | |
Handle: | http://hdl.handle.net/20.500.11769/359948 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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