In this paper, we present the extensive characterization of large-area silicon carbide-based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit a dark current density of 0.12 nA/cm(2) at 15 V, a 0.12-A/W responsivity at 300 nm, optimal visible blindness, and a switching time of similar to 190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 degrees C to 90 degrees C.

Large area SiC-UV phothodiode for spectroscopy portable system

Calcagno, L.
Membro del Collaboration Group
;
Albergo, S.
Membro del Collaboration Group
;
Tricomi, A.
Membro del Collaboration Group
;
Longo, D.
Membro del Collaboration Group
;
2019

Abstract

In this paper, we present the extensive characterization of large-area silicon carbide-based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit a dark current density of 0.12 nA/cm(2) at 15 V, a 0.12-A/W responsivity at 300 nm, optimal visible blindness, and a switching time of similar to 190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 degrees C to 90 degrees C.
Large area UV photodetector; optical sensor; SiC detector; Schottky diode
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/359948
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