Arrays of Single Photon Avalanche Detectors (SPAD) are considered today as a possible alternative to PMTs and other semiconductor devices in several applications, like physics research, bioluminescence, Positron Emission Tomography (PET) systems, etc. We have developed and characterized a first prototype array produced by STMicroelectronics in silicon planar technology and working at low voltage (3040 V) in Geiger mode operation. The single cell structure (size down to 20 mm) and the geometrical arrangement give rise to appealing intrinsic characteristics of the device, such as photon detection efficiency, dark count map, cross-talk effects, timing and energy resolution. New prototypes are under construction with a higher number of pixels that have a common output signal to obtain a so-called SiPM (Silicon PhotoMultiplier) configuration.

Arrays of Single Photon Avalanche Detectors (SPAD) are considered today as a possible alternative to PMTs and other semiconductor devices in several applications, like physics research, bioluminescence, Positron Emission Tomography (PET) systems, etc. We have developed and characterized a first prototype array produced by STMicroelectronics in silicon planar technology and working at low voltage (30-40 V) in Geiger mode operation. The single cell structure (size down to 20 mu m) and the geometrical arrangement give rise to appealing intrinsic characteristics of the device, such as photon detection efficiency, dark count map, cross-talk effects, timing and energy resolution. New prototypes are under construction with a higher number of pixels that have a common output signal to obtain a so-called SiPM (Silicon PhotoMultiplier) configuration. (c) 2006 Elsevier B.V. All rights reserved.

Multipixel geiger-mode photon detectors for ultra-weak light sources

MUSUMECI, Francesco;SCORDINO, Agata;TUDISCO, SALVATORE;
2007-01-01

Abstract

Arrays of Single Photon Avalanche Detectors (SPAD) are considered today as a possible alternative to PMTs and other semiconductor devices in several applications, like physics research, bioluminescence, Positron Emission Tomography (PET) systems, etc. We have developed and characterized a first prototype array produced by STMicroelectronics in silicon planar technology and working at low voltage (3040 V) in Geiger mode operation. The single cell structure (size down to 20 mm) and the geometrical arrangement give rise to appealing intrinsic characteristics of the device, such as photon detection efficiency, dark count map, cross-talk effects, timing and energy resolution. New prototypes are under construction with a higher number of pixels that have a common output signal to obtain a so-called SiPM (Silicon PhotoMultiplier) configuration.
2007
Arrays of Single Photon Avalanche Detectors (SPAD) are considered today as a possible alternative to PMTs and other semiconductor devices in several applications, like physics research, bioluminescence, Positron Emission Tomography (PET) systems, etc. We have developed and characterized a first prototype array produced by STMicroelectronics in silicon planar technology and working at low voltage (30-40 V) in Geiger mode operation. The single cell structure (size down to 20 mu m) and the geometrical arrangement give rise to appealing intrinsic characteristics of the device, such as photon detection efficiency, dark count map, cross-talk effects, timing and energy resolution. New prototypes are under construction with a higher number of pixels that have a common output signal to obtain a so-called SiPM (Silicon PhotoMultiplier) configuration. (c) 2006 Elsevier B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/36567
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