Nanometer CMOS technologies are characterized by low intrinsic gain and limited rejection to common-mode disturbances, issues that analog designers must counteract through nonconventional circuit solutions able to operate under sub-1-V supply voltages. In this letter, an approach originally proposed as a common-mode control loop for body-driven amplifiers is exploited by cross-connecting the bulk terminals of the active-load transistors of a source-coupled pair to sensibly improve its small-signal performance. A design example in 65-nm process supplied from 750 mV shows that the presented solution offers both a nominal 20-dB increase in differential gain and 29-dB increase in CMRR, as compared with the standard counterpart.

Active load with cross-coupled bulk for high-gain high-CMRR nanometer CMOS differential stages

Ballo A.;Grasso A. D.;Pennisi S.
Co-primo
2019

Abstract

Nanometer CMOS technologies are characterized by low intrinsic gain and limited rejection to common-mode disturbances, issues that analog designers must counteract through nonconventional circuit solutions able to operate under sub-1-V supply voltages. In this letter, an approach originally proposed as a common-mode control loop for body-driven amplifiers is exploited by cross-connecting the bulk terminals of the active-load transistors of a source-coupled pair to sensibly improve its small-signal performance. A design example in 65-nm process supplied from 750 mV shows that the presented solution offers both a nominal 20-dB increase in differential gain and 29-dB increase in CMRR, as compared with the standard counterpart.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/370981
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