In this work, the temperature dependence of the mobility along the c axis in 4H-SiC was determined. from the current voltage I-V characteristics of Schottky diodes in the temperature range 80–700 K. The procedure used series resistance measurements in Schottky diodes for extracting the mobility values in the epitaxial layer. For a dopant concentration of 1.21016 cm−3, at room temperature, a mobility value of 724 cm2 / V s was found, which decreased to 48.6 cm2 / V s at 700 K. In the temperature range 200–700 K, a dependence of the mobility as T−3 was determined.
|Titolo:||Drift mobility in 4H-SiC Schottky diodes|
|Autori interni:||CALCAGNO, Lucia|
|Data di pubblicazione:||2005|
|Rivista:||APPLIED PHYSICS LETTERS|
|Appare nelle tipologie:||1.1 Articolo in rivista|