In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si substrate, Si melts, and the remaining freestanding SiC layer was used as a seed layer for the homo-epitaxial growth. Different morphological analyses indicate that the growth temperature and the growth rate play a fundamental role in the stacking faults density. In details, X-ray diffraction and micro-Raman analysis show the strict relationship between growth temperature, crystal quality, and doping incorporation in the homo-epitaxial chemical vapor deposition CVD growth process of a 3C-SiC wafer. Furthermore, photoluminescence spectra show a considerable reduction of point defects during homo-epitaxy at high temperatures.
|Titolo:||Temperature investigation on 3C-SiC homo-epitaxy on four-inch wafers|
ANZALONE, RUGGERO [Membro del Collaboration Group]
REITANO, Riccardo [Membro del Collaboration Group]
|Data di pubblicazione:||2019|
|Appare nelle tipologie:||1.1 Articolo in rivista|