An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-skte electron ffansport in the "benchmark" n+ - n - n+ submicron silicon diode is simuiated and the quality of the model is assessed by comparison with Monte Carlo results.
Monte Carlo and hydrodynamic simulation of a one dimensional n(+)-n-n(+) silicon diode
MUSCATO, Orazio;Pidatella R. M;
1998-01-01
Abstract
An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-skte electron ffansport in the "benchmark" n+ - n - n+ submicron silicon diode is simuiated and the quality of the model is assessed by comparison with Monte Carlo results.File in questo prodotto:
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