This paper introduces a design strategy to reduce rise time of charge pumps maintaining equal the silicon area, which is effective when the load capacitance is lower than the total charge pump capacitance. The strategy relies on an unconventional pumping capacitors sizing, which set them not equal and follows a linear distribution. The approach is based on a theoretical analysis and is validated through post-layout simulations using a 130-nm complementary metal-oxide semiconductor (CMOS) standard technology. The simulations demonstrate the advantages of the proposed design strategy and the accuracy of the theory.
Linear distribution of capacitance in Dickson charge pumps to reduce rise time
Ballo A.;Grasso A. D.
Co-primo
;Palumbo G.;
2020-01-01
Abstract
This paper introduces a design strategy to reduce rise time of charge pumps maintaining equal the silicon area, which is effective when the load capacitance is lower than the total charge pump capacitance. The strategy relies on an unconventional pumping capacitors sizing, which set them not equal and follows a linear distribution. The approach is based on a theoretical analysis and is validated through post-layout simulations using a 130-nm complementary metal-oxide semiconductor (CMOS) standard technology. The simulations demonstrate the advantages of the proposed design strategy and the accuracy of the theory.File in questo prodotto:
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