The results of a new epitaxial process using an industrial 6x2" wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2 > 0.05%) and an increase of the growth rate until about 20 lm/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current–voltage (I–V) characteristics.
|Titolo:||High growth rate process in a SiC horizontal CVD reactor using HCl|
|Data di pubblicazione:||2006|
|Citazione:||High growth rate process in a SiC horizontal CVD reactor using HCl / F. LA VIA; G. GALVAGNO; F. ROCCAFORTE; F. GIANNAZZO; S. DI FRANCO; A. RUGGIERO; REITANO R; L. CALCAGNO; G. FOTI; M. MAUCERI; S. LEONE; G. PISTONE; F. PORTUESE; G. ABBONDANZA; G. ABBAGNALE; A. VENERONI; F. OMARINI; L. ZAMOLO; M. MASI; G. L. VALENTE; D. CRIPPA. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 83(2006), pp. 48-50.|
|Appare nelle tipologie:||1.1 Articolo in rivista|