The results of a new epitaxial process using an industrial 6x2" wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2 > 0.05%) and an increase of the growth rate until about 20 lm/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current–voltage (I–V) characteristics.

High growth rate process in a SiC horizontal CVD reactor using HCl

REITANO, Riccardo;CALCAGNO, Lucia;
2006-01-01

Abstract

The results of a new epitaxial process using an industrial 6x2" wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2 > 0.05%) and an increase of the growth rate until about 20 lm/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current–voltage (I–V) characteristics.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/38516
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