NiO thin films were grown through metalorganic chemical vapour deposition (MOCVD) on quartz and LaAlO3 (001) single crystal substrates. Two different volatile and thermally stable nickel β-diketonate adducts, Ni(hfa)2•tmeda and Ni(tta)2•tmeda [H-hfa=1,1,1,5,5,5-hexafluoro-2,4-pentandione; tmeda= N,N,N’,N’-tetramethylethylendiamine, Htta= 2-thenoyltrifluoroacetone] were applied as precursors for the growth of NiO films. The comprehensive study, applying the two different precursors and changing the processing parameters, allowed a morphological control of the deposited NiO films. The AFM analyses indicate different values of roughness for NiO films obtained from the two different precursors, those from Ni(tta)2•tmeda showing a lower roughness. In addition, UV-Vis and ellipsometric measurements on NiO films grown from the Ni(tta)2•tmeda show higher transparency, less defects/impurities, better crystallinity and higher refractive index than films deposited using the Ni(hfa)2•tmeda source. Raman spectroscopy confirmed the antiferromagnetic nature of the NiO layers. The relationship between the precursor/substrate nature and film properties allowed to define the best precursor and conditions to the MOCVD growth of high quality NiO films.
|Titolo:||Morphology-controlled synthesis of NiO films: the role of the precursor and the effect of the substrate nature on the films' structural/optical properties|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||1.1 Articolo in rivista|