Time-of-flight SIMS profiles have been obtained on an SiO2/Si system. A dual ion beam experimental set-up has been used in order to decouple the erosion process due to an Ar+ beam from the analysis done by a Ga+ beam. The Ga+ yield shows a characteristic double-peaked structure at the SiO2/Si interface. It is shown that the peak at shallower depth can be accounted for by a change in sputtering rate, whereas that located at the interface can be interpreted in terms of gallium segregation. Copyright (C) 2000 John Wiley & Sons, Ltd.
Interfacial phenomena during depth profiling with gallium ions: a ToF-SIMS approach
LICCIARDELLO, Antonino;
2000-01-01
Abstract
Time-of-flight SIMS profiles have been obtained on an SiO2/Si system. A dual ion beam experimental set-up has been used in order to decouple the erosion process due to an Ar+ beam from the analysis done by a Ga+ beam. The Ga+ yield shows a characteristic double-peaked structure at the SiO2/Si interface. It is shown that the peak at shallower depth can be accounted for by a change in sputtering rate, whereas that located at the interface can be interpreted in terms of gallium segregation. Copyright (C) 2000 John Wiley & Sons, Ltd.File in questo prodotto:
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