This paper is concerned with electron transport and heat generation in semiconductor devices. An improved version of the electrothermal Monte Carlo method is presented. This modification has better approximation properties due to reduced statistical fluctuations. The corresponding transport equations are provided and results of numerical experimentsare presented
A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation
MUSCATO, Orazio;DI STEFANO, VINCENZA;
2013-01-01
Abstract
This paper is concerned with electron transport and heat generation in semiconductor devices. An improved version of the electrothermal Monte Carlo method is presented. This modification has better approximation properties due to reduced statistical fluctuations. The corresponding transport equations are provided and results of numerical experimentsare presentedFile in questo prodotto:
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