The diffusion and activation of arsenic implanted into germanium at 40 keV with maximum concentrations below and above the solid solubility (8 x 10(19) cm(-3)) have been studied, both experimentally and theoretically, after excimer laser annealing (lambda = 308 nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1 x 10(20) cm(-3), which represents a new record for the As-doped Ge system. (C) 2014 AIP Publishing LLC.
|Titolo:||N-type doping of Ge by As implantation and excimer laser annealing|
|Data di pubblicazione:||2014|
|Citazione:||N-type doping of Ge by As implantation and excimer laser annealing / Milazzo R; Napolitani E; Impellizzeri G; Fisicaro G; Boninelli S; Cuscuna M; De Salvador D; Mastromatteo M; Italia M; La Magna A; Fortunato G; Priolo F; Privitera V; Carnera A. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 115:5(2014).|
|Appare nelle tipologie:||1.1 Articolo in rivista|