The crystallization behavior of amorphous silicon carbon alloys films was investigated using infrared spectroscopy and transmission electron microscopy. The films were prepared by plasma enhanced chemical vapor deposition and the thickness and composition were checked by Rutherford backscattering spectroscopy. Annealing processes were carried out in the temperature range of 750-1100 degreesC in a vacuum furnace. The changes in the infrared absorption band (400-1200 cm(-1)) after annealing indicate a transition from amorphous to a crystalline phase. The onset temperature for this transition depends on the alloy composition, and it increases from 800 to 950 degreesC with increasing carbon concentration. The microstructure of crystallized SiC is influenced by the film composition. Transmission electron microscopy (TEM) analysis shows that the crystallized stoichiometric alloy is composed by polycrystalline beta-SiC grains. TEM and Raman spectroscopy evidenced that in silicon rich and carbon rich alloys, the beta-SiC grains are surrounded by silicon grains and graphitic clusters, respectively. (C) 2002 Elsevier Science B.V All rights reserved.
|Titolo:||Crystallization process of amorphous silicon-carbon alloys|
|Data di pubblicazione:||2002|
|Citazione:||Crystallization process of amorphous silicon-carbon alloys / Calcagno L; Musumeci P; Roccaforte F; Bongiorno C; Foti G. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 411:2(2002), pp. 298-302.|
|Appare nelle tipologie:||1.1 Articolo in rivista|