The ion-beam-induced epitaxial crystallization rate of amorphous Si was measured by time-resolved reflectivity on crystal substrates with orientations every 5-degrees from (100) to (111) to (011). The measurements show that the (011) regrows 3% slower than the (100), and the regrowth rate steadily decreases with increasing misorientation towards the (111). These data can be explained using a growth-site-limited model wherein a beam-induced defect flux to the interface results in a growth rate dependent on the interfacial bonding configuration.
GROWTH-SITE-LIMITED CRYSTALLIZATION OF AMORPHOUS-SILICON
PRIOLO, Francesco
1992-01-01
Abstract
The ion-beam-induced epitaxial crystallization rate of amorphous Si was measured by time-resolved reflectivity on crystal substrates with orientations every 5-degrees from (100) to (111) to (011). The measurements show that the (011) regrows 3% slower than the (100), and the regrowth rate steadily decreases with increasing misorientation towards the (111). These data can be explained using a growth-site-limited model wherein a beam-induced defect flux to the interface results in a growth rate dependent on the interfacial bonding configuration.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
