HIGH-ENERGY P-IMPLANTS IN SILICON

Phosphorus ions in the energy range 0.25 .1 MeV and in the dose range 2 x 10(1.3)-1 x 10(15) P/cm2 were implanted into (100) Si single crystal at different tilt angles. In particular channeling and random conditions were investigated. For comparison some implants were performed on samples with a 2-mu-m thick surface amorphous layer. Chemical concentration P profiles were obtained by secondary ion mass spectrometry. Carrier concentration and mobility profile measurements were carried out by sheet resistance and Hall measurements on implanted van der Pauw patterns. Carrier concentration profiles were also obtained by spreading resistance (SR) measurements. The damage in the as-implanted samples was determined by backscattering and channeling spectrometry (RBS) as a function of the dose and implantation energy. Comparison of random implants in crystal with implants in amorphous layers shows that in the first case it is impossible to completely avoid the channeling tail. In the implants performed under channeling conditions at low doses the P profiles are flat over more than 2-mu-m thick layers. Furthermore, by increasing the implanted dose, the shape of the profiles dramatically changes due to the dechanneling caused by the crystal disorder. The data are discussed and compared with Monte Carlo simulations using the MARLOWE code. A simple description of the electronic energy loss provides an excellent agreement between the calculated and experimental profiles.