Phosphorus ions in the energy range 0.25-1 MeV and in the dose range (2 x 10(13))-(1 x 10(15)) cm-2 were implanted on Si<100> single crystals at a tilt angle of either 3-degrees or at 7-degrees with respect to the normal. For comparison some implants were performed on samples with a surface amorphous layer 2-mu-m thick. Carrier concentration and mobility profiles of the implanted species were carried out by Van der Pauw measurements and by spreading resistance profilometry analyses. The presence of channelling tails due to the feeding-in effect was evidenced and studied as a function of dose and implantation angle. These data are discussed and compared with Monte Carlo calculations using the Marlowe code.
CONCENTRATION PROFILES AND ELECTRICAL CHARACTERIZATION OF HIGH-ENERGY PHOSPHORUS IMPLANTS IN (100) SILICON
PRIOLO, Francesco;
1991-01-01
Abstract
Phosphorus ions in the energy range 0.25-1 MeV and in the dose range (2 x 10(13))-(1 x 10(15)) cm-2 were implanted on Si<100> single crystals at a tilt angle of either 3-degrees or at 7-degrees with respect to the normal. For comparison some implants were performed on samples with a surface amorphous layer 2-mu-m thick. Carrier concentration and mobility profiles of the implanted species were carried out by Van der Pauw measurements and by spreading resistance profilometry analyses. The presence of channelling tails due to the feeding-in effect was evidenced and studied as a function of dose and implantation angle. These data are discussed and compared with Monte Carlo calculations using the Marlowe code.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
