Praseodymium oxide (Pr2O3) thin films have been deposited on Si(100) substrates by metalorganic chemical vapor deposition using praseodymium tris-2,2,6,6-tetramethyl-3,5-heptandionate as source material. Film structural, morphological, and compositional characterizations have been carried out. Dielectric properties have been studied as well by capacitance-voltage and current-voltage measurements on metal-oxide-semiconductor capacitors of several areas. The Pr2O3 films have shown a dielectric constant epsilon=23-25 and a leakage current density of 8.8x10(-8) A/cm(2) at + 1 V. (C) 2003 American Institute of Physics.
Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon
MALANDRINO, Graziella;
2003-01-01
Abstract
Praseodymium oxide (Pr2O3) thin films have been deposited on Si(100) substrates by metalorganic chemical vapor deposition using praseodymium tris-2,2,6,6-tetramethyl-3,5-heptandionate as source material. Film structural, morphological, and compositional characterizations have been carried out. Dielectric properties have been studied as well by capacitance-voltage and current-voltage measurements on metal-oxide-semiconductor capacitors of several areas. The Pr2O3 films have shown a dielectric constant epsilon=23-25 and a leakage current density of 8.8x10(-8) A/cm(2) at + 1 V. (C) 2003 American Institute of Physics.File in questo prodotto:
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